lthough Metal-Organic Chemical Vapour Deposition (MOCVD) is the most common technique to grow III-nitride films for light-emitting diode (LED) application, there are still several open questions such as the dislocations in LED structures and low thermal conductivity. The solutions to such problems have been approached by various deposition techniques over the past few years. In this review, the properties of gallium nitride (GaN) grown using different techniques and the consequences of the heteroepitaxial layers are discussed. At first, the general properties of GaN and its application for optoelectronic

Aluminum nitride (AlN) thin films on silicon (Si) (100) substrates are grown by pulsed rf magnetron sputtering at constant power 200 W, 50 % duty cycle, and substrate at room temperature. The films were characterized using filmetrics, X-ray diffraction, energy dispersive spectroscopy (EDS) and atomic force microscopy (AFM) techniques. The deposited AlN thickness using frequency of 5 Hz for distance of 1-inch and 6- inches were70.74 nm and 20.40 nm, respectively. The depositions rate is obviously affected by the working distance between the target to the substrates. This is because, at shorter distance between target to substrate, the kinetic energy of bombardment particles become higher. Thus, higher deposition rate and good crystallinity can be obtained as the Al atom and N atom will deposited directly to the substrates. Then, the effect of pulse frequency was investigated. The thickness of AlN thin films using frequency of 5 Hz, 3 Hz and 1 Hz is 70.74 nm 63.72 nm, and 70.23 nm, respectively. The effects of frequency using pulsed rf magnetron was significantly small. The experimental results clearly demonstrate that the energy

Aluminium nitride (AlN) thin film is deposited by RF magnetron sputtering using Al sputtering target at room temperature. The sputter source was tilted 45° and the substrate holder was unrotated. The deposited AlN films were in the thickness range between 200 to 280 nm. The structural, elemental composition, morphological and topological properties of AlN with different thickness has been investigated. XRD analysis results revealed that all the AlN films deposited crystallize in hexagonal wurtzite phase (w-AlN). The crystal orientation of AlN (002) plane start to appear when the thickness of the AlN film increases and the thickest AlN film has a highest peak intensity of (002) plane with smallest FWHM indicated a good crystal quality of c-axis structure. The chemical composition of AlN analyze using EDS shows that all the films have AlN composition nearest to the stoichiometric and have a rice-like morphology regardless of the film thickness. The AFM analysis revealed that the surface roughness of the AlN films is increases along with the grain size as the thickness of the AlN films increased.

Fabrication of amorphous GaN thin film was performed using RF magnetron sputtering without any external temperature on silicon substrate. Thickness of deposited GaN film was approximately 200 nm. This work presents the surface morphology and roughness of amorphous GaN using FESEM and AFM analyses, respectively. The amorphous GaN had a pebble like structure with an average surface roughness of 1.34 nm. The effect of the post-annealing of the GaN thin films was also presented. The XRD result of the post annealing showed that the gallium nitride oxide present after annealing process was done at ambient condition with an average surface roughness of 1.48 nm.

The GaN is considered by many as it has demonstrated the capability to be the displacement technology for silicon semiconductor in power electronic devices and light emitting diodes. In this project, heterostructure of GaN/AlN were deposited using RF magnetron sputtering at room temperature and its properties was studied. The structural and surface roughness of the deposited films were studied using X-ray diffraction (XRD) and atomic force microscope (AFM). Additionally, cross-sectional of field emission scanning electron microscope (FESEM) was used for the measurement of GaN/AlN thickness. The XRD results show that the deposited GaN is amorphous while the surface roughness and grain size are in the of ~2 nm and 60 nm, respectively. The surface topography observed using AFM shows that the GaN/AlN has homogenous structure while FESEM images show that the GaN/AlN film has pebble like structure.

The deposition of AlN thin film was conducted in three different working pressures of 3, 5 and 10 mTorr by HiPIMS method with tilted sputter target. XRD pattern shows nearly single crystalline of a-axis AlN thin films were produced. AlN thin film growth rate increase with the decrease of working pressure as agreed by FESEM cross-sectional images. The thickness of AlN thin film observed at 267 nm, 221nm, and 183 nm for 3 mTorr, 5 mTorr and 10 mTorr, respectively. The degree of crystallinity was observed higher at lower working pressure at 64.3% and reduced to 52.02% at 10 mTorr. However, the micro strain and dislocation density were observed improved over the increase of working pressure referring to single-crystalline a-axis AlN dominant peak.

This paper aims to report the influence of sputtering plasma deposition time on the structural and mechanical properties of the a-axis oriented aluminium nitride (AlN) thin films.

This study aims to investigate the effect of temperature applied at the initial deposition of Aluminium Nitride (AlN) thin-film on a silicon substrate by high-power impulse magnetron sputtering (HiPIMS) technique.