Infineon WBG Summer School

Infineon WBG Technology Academy

13 – 15 October 2026

Bridging the Gap

for Industry – Academia Collaboration

For Better Malaysia

Empowering Malaysia’s National Semiconductor Strategy through Wide Bandgap Innovation and Talent Development.

The Infineon WBG Technology Academy supports Malaysia’s National Semiconductor Strategy by helping move the country further up the semiconductor value chain, from manufacturing strength toward deeper technology development, research, and innovation. The program highlights the growing need for stronger research and development capabilities in semiconductors, especially in advanced areas such as wide bandgap technology. This is also highly relevant as AI accelerates demand for efficient, high-density power solutions: as the global leader in power semiconductors and a company recognized as the one to beat in AI data center power semiconductors, Infineon is well positioned to help shape the next wave of AI infrastructure. Through this academy, Infineon brings together promising semiconductor talents with international industry experts from Infineon for intensive technical exchange and collaborative growth.

Date

13 – 15 October 2026

Venue

Universiti Sains Malaysia (USM) – Auditorium Murad, INOR Laboratory, and the School of Physics

Who Should Attend?

This programme is highly recommended for engineering and physics students, academic researchers, and industry professionals who want to deepen their understanding of wide bandgap technologies, power electronics, and semiconductor manufacturing.

High-Voltage Device Physics

Dive deep into the physics of Wide Bandgap (WBG) devices, exploring the efficient use of green energy enabled by Silicon Carbide (SiC) and future trends in GaN power devices.

Material Science of WBG Wafer Technologies

 

Understand the complete lifecycle from R&D to the manufacturing environment, with dedicated sessions on SiC MOSFET process technology and the growth of nanostructured GaN.

Shaping Future Semiconductor Talent

 

Participate in critical industry-academia roundtable discussions focused on aligning university curricula with WBG industry needs and establishing a robust Malaysia Semiconductor Innovation Network.

From powering AI data centers to enabling efficient green energy grids, Wide Bandgap Technology is defining the future of engineering.

Join us for 3 immersive days of expert talks, live lab tours, and ecosystem-building forums with Infineon, USM and CREST

Program Details
Together for A Stronger Semiconductor Ecosystem
The Infineon WBG Technology Academy is a collaborative three-day initiative bringing together industry leaders and academic experts from Infineon, Universiti Sains Malaysia (USM), and Collaborative Research in Engineering, Science & Technology (CREST). Focused on the advancement of Wide Band Gap (WBG) technologies, this program explores the critical intersection of high-voltage device physics, material science, and semiconductor talent development.
Day Time Activities

Day 1

13/10/2026

Sains@USM, Auditorium Murad 

8:30 AM – 5:30 PM
  • Registration
  • Opening Remarks by
    • Profesor Dato’ Seri Ir. Dr. Abdul Rahman Mohamed, FASc., (Vice Chancellor, Universiti Sains Malaysia)
    • Ts. Jaffri Ibrahim (Chief Executive Officer, Collaborative Research in Engineering, Science & Technology (CREST)
  • Launch by Mr. V.Lakshmanan, Vice President, Infineon.
  • Talk : “Infineon – A Wide Band Gap Company”Speaker: Dr. rer. Nat. (Ph.D.) Fabian Rasinger, Infineon
  • Talk : “The vision – efficient use of green energy enabled by SiC”Speaker: Doctor of Philosophy (Ph.D.)  Damiano Cassese, Infineon
  • Talk : GaN Power Devices: High-voltage operations and Future TrendsSpeaker: Associate Professor Ts. Dr. Mohd Syamsul Nasyriq, Universiti Sains Malaysia
  • Topic: “National Semiconductor Strategy (NSS)”Speaker: Mr Lau Yue Hoong, Program Director Market & Industry Development, Collaborative Research in Engineering, Science & Technology (CREST)
  • Poster Exhibition (Theme: Power Devices)
  • Laboratory Tour –  Institute of Nano Optoelectronics Research and Technology (INOR)

Day 2

14/10/2026

Conference Room, Level 3, School of Physics

8:00 AM – 5:00 PM
  • Talk: “From idea to product – SiC R&D and manufacturing environment at Infineon“
    Speaker: Doctor of Philisophy (Ph.D.) Ravi Joshi, Infineon
  • Talk: “Silicon Carbide MOSFET Process Technology”Speaker: Dr. rer. Nat. (Ph. D.) Wolfgang Bergner, Infineon
  • Talk: “Growth of Nanostructured GaN”Speaker: Associate Professor Dr. Yam Fong Kwong, Universiti Sains Malaysia
  • Talk: “Wide bandgap Random Lasers”Speaker: Associate Professor Ts. Dr. Wan Maryam Wan Ahmad Kamil, Universiti Sains Malaysia
  • Poster exhibition (Theme: Material Science of WBG Wafer Technologies)
  • Laboratory Tour – School of Physics

Day 3

15/10/2026

Sains@USM, Auditorium Murad

8:30 AM – 12:00 PM
  • Forum 1: Shaping Future Semiconductor Talent: Aligning University Curriculum with Industry Needs in WBG Power Devices
  • Forum 2: Malaysia Semiconductor Innovation Network for Power and MEMS
  • Closing Ceremony & Certificate Presentation

The Infineon WBG Technology Academy features a powerful collaboration of global industry practitioners from Infineon Technologies and distinguished academic researchers from Universiti Sains Malaysia (USM). Together, they bridge the gap between cutting-edge material science research and high-volume semiconductor manufacturing to drive the future of Wide Bandgap technology.

Meet The Experts

No. Name Bio
1. Dr. Rer. Nat. Fabian Rasinger Served as a Technology Development Engineer for SiC at Infineon Technologies Austria AG since 2019, having completed his Ph.D. in collaboration with the company. He holds experience facilitating basic SiC technology development training, instructing on the processes required for devices like MPS-diodes, MOSFETs, and JFETs.
2. Ph.D. Damiano Cassese   Holding a Ph.D. in Nanotechnology and a Master’s degree in Physics from Università degli Studi di Trieste, Dr. Cassese has been a Staff Engineer in Technology Development at Infineon Technologies in Villach, Austria, since 2018. His background encompasses extensive work in microfabrication, MEMS design, and the growth of semiconductor nanowires. 
3. Ph.D. Ravi Joshi   Dr. Joshi serves as a Lead Principal Technology Development Engineer at Infineon Technologies AG, bringing over 14 years of experience with the company. He earned his Ph.D. from Technische Universität Darmstadt and his Master of Science in Materials Science from the Indian Institute of Technology, Madras, specializing in nanotechnology and materials science.
4. Dr. Rer. Nat. Wolfgang Bergner   With a Dr. rer. nat. in Physics from Friedrich-Alexander-Universität Erlangen-Nürnberg, Dr. Bergner is a Senior Principal of Technology Development for SiC at Infineon Technologies Villach, a role he has held for 17 years. His extensive career in the semiconductor industry spans over 30 years and includes management positions at Qimonda and the DRAM Development Alliance 
No. Name Bio
1. Assoc. Prof. Ts. Dr. Mohd Syamsul Nasyriq Samsol Baharin  Dr. Syamsul leads the III-Nitrides for Power Devices research group at USM’s Institute of Nano Optoelectronics Research and Technology (INOR). An expert in wide bandgap semiconductors—specifically gallium nitride (GaN) and diamond materials—he holds eight local and international patents covering advanced device technologies. He earned his Ph.D. from Waseda University, Japan, where his pioneering work on polycrystalline diamond set a world-record breakdown voltage capability for cost-effective power applications.
2. Assoc Prof Ts Dr Wan Maryam Wan Ahmad Kamil Dr. Wan Maryam serves as the Director of the Industry Network Office and an Associate Professor at USM’s School of Physics, focusing on aligning the university’s industry engagement with Malaysia’s National Semiconductor Strategy (NSS) and preparing future-ready talent. Previously, she headed the Applied and Engineering Research Group, applying fundamental physics to develop new technologies. She earned her Ph.D. in Physics from The University of Nottingham and is a registered Professional Technologist (Ts.) in Nanotechnology under the Malaysian Board of Technologies. An active STEM advocate and HRD Corp certified trainer, her current research focuses on sustainable semiconductor nano lasers utilizing wide bandgap materials, including ZnO, GaN, and hBN.
3. Yam Fong Kwong Dr. Yam serves as an Associate Professor at USM’s School of Physics, having previously held the role of Programme Chairperson for Engineering Physics. He earned his Ph.D. and B.Sc. in Physics from USM, alongside an M.Sc. in Materials Science and Engineering from the National University of Singapore (NUS). A highly cited researcher with an H-index of 37 and over 6,800 citations, Dr. Yam specializes in advanced materials, focusing on wide bandgap low-dimensional materials, sensors, photocatalysis, and energy storage. His extensive scholarly output includes more than 300 peer-reviewed articles, several books and monographs, two copyrights, and a filed patent.
CREST logo
No. Name Bio
1. Me. Lau Yue Hoong Lau Yue Hoong serves as the Program Director at CREST, overseeing strategic initiatives such as the National Semiconductor Strategy (NSS), Gallium Nitride and the Advanced Packaging programs. With a tenure of three years at CREST, Lau brings over two decades of experience in the electrical and electronic (E&E) and technology sectors, having held positions at Hewlett Packard, Agilent Technologies, and Keysight Technologies. Throughout his career, Lau has assumed diverse roles, commencing as a process engineer before progressing to roles in product management, business management, business development, and general management. Demonstrating a fervent enthusiasm for technology, he holds several patents granted in the United States. Lau holds an E&E Engineering Degree attained from the University of Calgary, Canada.
We invite students to submit and showcase their research during our Poster Exhibition! This is an excellent opportunity to display your work, engage with industry experts, and gain valuable recognition.
Poster Guideline

All registered student participants must select one track during registration based on their research focus:

  • Track 1 (Day 1): Wide Bandgap Power Devices
  • Track 2 (Day 2): Wide Bandgap Material and Devices

 

Key Requirements & Poster Format

  • Poster Dimensions: Standard A1 (84.1 cm x 59.4 cm) , Vertical / Portrait orientation.
  • Display & Presentation: Participants are required to be present at their assigned poster booth during the official judging and exhibition session.

 

Registration

  • Complete your online registration via the registration line.
  • Select your designated track (Day 1 or Day 2).
  • Submit your final poster abstract/PDF before the deadline.

 

Guideline

Kindly download the PDF guideline below for your reference.

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NOR Lab Tour & Poster Exhibition Guideline
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INOR Lab Tour