Vapor Phase Epitaxy (VPE) Technology Research for GaN-on-Si High-Electron Mobility Transistor

Abstract:

The present invention discloses a Depletion-Mode High Electron Mobility Transistor, D-HEMT and a method for fabrication thereof. The D-HEMT, comprising a Si-(111) substrate; a multi-layered heterostructures grown together with buffer and transition layers (1004) on the Si-(111) substrate; a source electrode and a drain electrode of the D-HEMT; a gate of the D-HEMT; and a gate pad pattern of the gate of the D-HEMT. The method of the present invention comprises growing a multi-layered hetero-structure with buffer and transition layers on a Si-(111) substrate through metal organic chemical vapor deposition, utilizing group III-V materials. Subsequent steps include defining isolation patterns via water fabrication isolation process, and formatting source and drain electrodes of the transistor. The method includes defining the gate, and creating a gate pad pattern associated with gate of the transistor.