Integrated RF Energy Harvesting System in 5G Wireless Sensor Node for Internet of Things (IoT) Application

Abstract:

The present invention relates to a voltage booster circuit including a first and a second gate biasing circuit connected in parallel to one another, one or more ends of each gate biasing circuit being operatively connected to a corresponding auxiliary NMOS transistor and a corresponding primary capacitor, one or more other ends of each gate biasing circuit being operatively connected to a corresponding secondary capacitor; such that in one part of a switching cycle a voltage source and a first clock source are on while a second clock source is off and such that the first gate biasing circuit switches on and the second gate biasing circuit switches off; and such that in another part of a switching cycle the voltage source and the second clock source are on while the first clock source is off and such that the second gate biasing circuit switches on and the first gate biasing circuit switches off.