GaN-Based LED Surface Postprocessing for Enhanced Light Extraction

Abstract:

The invention relates to a method of modifying a die surface of a multi-facet light emitting diode (LED) surface. The method includes 1) dicing LED semiconductor dies based on a requirement. The method further includes 2) picking up the dies vertically. The method further 10 includes 3) laser ablating the dies with specific focus, masking and predetermined time on the vertical side walls of the LED. The method further includes 4) rotating the LED dies on a vertical axis or pick up axis. The method further includes continuing the ablation and repeating the steps 3) to 5) until all 4 vertical side-walls of die have been processed and the method further includes performing one of: returning the dies to an original location or proceeding for subsequent processing, and picking up the subsequent dies to repeat the steps 1) to 5).