21 Mar Vapor Phase Epitaxy (VPE) Technology Research for GaN-on-Si High-Electron Mobility Transistor
[vc_row css_animation="" row_type="row" use_row_as_full_screen_section="no" type="full_width" angled_section="no" text_align="left" background_image_as_pattern="without_pattern" el_class="btm-col-pd-100" z_index=""][vc_column][vc_row_inner row_type="row" type="grid" text_align="left" css_animation="" el_class="page-title-left-row"][vc_column_inner el_class="page-title-left-col"][vc_column_text] Vapor Phase Epitaxy (VPE) Technology Research for GaN-on-Si High-Electron Mobility Transistor [/vc_column_text][vc_separator type="normal" transparency="0" up="10" down="10"][vc_column_text] Abstract: The present invention relates to a method of producing GaN epitaxial layers on silicon 111 substrate...