Vapor Phase Epitaxy (VPE) Technology Research for GaN-on-Si High-Electron Mobility Transistor

Abstract:

The present invention relates to a method of producing GaN epitaxial layers on silicon 111 substrate includes cleaning silicon 111 substrate using an organic cleaning solution, buffered HF solution dip applied to remove native oxide layer on the substrate surfaces; immersing the substrate at least two times in acetone, and immersing the substrate at least one time in propanol; rinsing substrate with DI water; soaking with buffered HF solution to remove native oxide layer on the substrate surfaces; cleaning substrate with hydrogen cleaning in initial stage of epitaxial process; subjecting the substrate to a nitridation process with both hydrogen and ammonia; performing growth of CF-AlN seed layer using MOCVD; performing growth of PF-AlN seed layer using MOCVD; performing growth of AlN/GaN in strained layer superlattices [SLs] using MOCVD; and performing growth of un-doped GaN layer using MOCVD.