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An 0.4–2.8 GHz CMOS Power Amplifier With On-Chip Broadband-Pre-Distorter (BPD) Achieving 36.1–38.6% PAE and 21 dBm Maximum Linear Output Power

Home > An 0.4–2.8 GHz CMOS Power Amplifier With On-Chip Broadband-Pre-Distorter (BPD) Achieving 36.1–38.6% PAE and 21 dBm Maximum Linear Output Power

22 Apr An 0.4–2.8 GHz CMOS Power Amplifier With On-Chip Broadband-Pre-Distorter (BPD) Achieving 36.1–38.6% PAE and 21 dBm Maximum Linear Output Power

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